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The single crystal growth furnace has the following characteristics:
1. Proper control aspect
       Correct temperature: able to control the temperature within a very accurate range, for example, when growing silicon single crystals by direct pull method, the polycrystalline silicon raw material in the quartz crucible should be heated to above 1450 ℃ and kept stable. The accuracy of temperature distribution in the thermal field directly affects the quality of crystal growth. If the temperature fluctuates too much, it may lead to defects and uneven distribution of impurities in the crystal.
      Multi parameter correct control: In addition to temperature, it can also correctly control parameters such as crystal pulling speed, crucible rotation speed, furnace atmosphere (flow rate and pressure of inert gases such as argon), vacuum degree, etc. Taking the zone melting method as an example, it is necessary to correctly control parameters such as the movement speed of the melting zone to ensure the integrity and purity of single crystal growth.
2. In terms of environmental creation
      High vacuum environment: Equipped with a high-performance vacuum system, it can extract the air inside the furnace to achieve high or low vacuum environment, reduce the mixing of impurity gases, prevent the crystal from being oxidized or introducing other impurities during the growth process, and improve the purity of the crystal.
      Inert atmosphere protection: Typically, inert gases such as nitrogen, helium, and argon are introduced to further protect the melt and growing crystals from chemical reactions when in contact with air. At the same time, the furnace atmosphere can be controlled by adjusting the gas flow rate and pressure to provide a stable chemical environment for crystal growth.
3. In terms of structural design
      Double layer water-cooled structure: The furnace body generally adopts a double-layer water-cooled design, which can effectively remove the heat generated by high temperature inside the furnace, ensure that the furnace body temperature is within a reasonable range, prevent the furnace body material from deforming due to high temperature, extend the service life of equipment, and also help maintain the stability of the temperature field inside the furnace.
      Reasonable spatial layout: The internal spatial layout is reasonable, providing sufficient space for crystal growth, and facilitating the installation and replacement of crucibles, seed crystals, and other components, as well as the arrangement of heating elements, temperature measuring devices, etc. For example, some single crystal furnaces are equipped with secondary feeding ports, which facilitate the replenishment of raw materials during the growth process.
4. In terms of automation level
      Fully automatic control: Using an excellent computer control system, it can achieve automatic control of the entire crystal growth process from vacuum pumping, leak detection, furnace pressure control, melting material, crystal introduction, shoulder placement, equal diameter, finishing to furnace shutdown, reducing manual operation errors, improving production efficiency and product quality stability.
      Real time monitoring and feedback: Equipped with sensors and monitoring equipment, such as high pixel CCD diameter measurement ADC system, liquid level temperature measurement device, etc., it can monitor the growth status of crystals in real time, such as crystal diameter, temperature, liquid level position, etc., and feedback the data to the control system for timely parameter adjustment.
5. Materials and components
      High temperature resistant materials: Heating elements are usually made of high-temperature resistant materials such as graphite, which can withstand high temperature environments and ensure that deformation, melting, or oxidation does not occur during long-term heating processes, providing a stable heat source for crystal growth.
      High quality components: Key components such as crystal lifting and rotating structures, crucible lifting and rotating structures, etc., have high precision, high stability, and high reliability, ensuring that they can operate correctly according to the set parameters during the crystal growth process, guaranteeing the quality and consistency of crystal growth.
6. Other aspects
      Widely applicable: It can grow various single crystal materials, including semiconductor materials (such as silicon, germanium, gallium arsenide, etc.), optical crystal materials (such as laser crystals, fiber crystals, etc.), and other inorganic materials (such as ion battery materials, ceramic materials, etc.), to meet the needs of different fields.
      Technological innovation: With the continuous development of technology, the technology of single crystal growth furnaces is also constantly innovating, such as adopting new heating technologies, control algorithms, material and structural designs, etc., to improve the efficiency, quality and size of crystal growth, reduce costs, and meet the growing demand for single crystal materials in the market.